Mobility analysis of highly conducting thin films: Application to ZnO
Tue, 2010-02-09 01:04 — Guest
D. C. Look, K. D. Leedy, D. H. Tomich, and B. Bayraktaroglu
Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity a ... [Appl. Phys. Lett. 96, 062102 (2010)] published Mon Feb 8, 2010.
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