Fast and slow carrier recombination transients in highly excited 4H and 3CSiC crystals at room temperature
Tue, 2010-07-27 19:00 — Guest
P. SCajev, V. Gudelis, K. Jarasiunas, and P. B. Klein
Nonequilibrium carrier recombination in highly excited epitaxial layers of 4HSiC and free standing 3CSiC was analyzed numerically and studied experimentally by the time-resolved free carrier absorption (FCA) technique. The measurement setup combined interband carrier excitation by a picosecond laser ... [J. Appl. Phys. 108, 023705 (2010)] published Tue Jul 27, 2010.
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