Virtual Journal of Laser

T. Dhakal, D. Mukherjee, R. Hyde, P. Mukherjee, M. H. Phan et al.
We report the observation of contrasting magnetic behavior in cobalt ferrite (CFO) thin films deposited on single crystalline magnesium oxide (MgO) and strontium titanate (STO). Epitaxial films on MgO (100) with a lattice mismatch of 0.35% showed out-of-plane anisotropy whereas the films on STO (100 ... [J. Appl. Phys. 107, 053914 (2010)] published Thu Mar 11, 2010.

Zheng Xu, Haiping He, Luwei Sun, Yizheng Jin, Binghui Zhao et al.
ZnO nanocrystalline films were grown using InO nanostructure as template by pulsed laser deposition. A strong emission at 3.372 eV dominates the low temperature photoluminescence (PL) spectra. Combined with annealing and surface passivation process, it is indicated from temperature-dependent PL resu ... [J. Appl. Phys. 107, 053524 (2010)] published Wed Mar 10, 2010.

G. Matmon, D. J. Paul, L. Lever, M. Califano, Z. Ikonic et al.
Quantum cascade lasers (QCLs) are compact sources that have demonstrated high output powers at terahertz (THz) frequencies. To date, all THz QCLs have been realized in III-V materials. Results are presented from SiGe quantum cascade superlattice designs emitting at around 3 THz which have been grown ... [J. Appl. Phys. 107, 053109 (2010)] published Mon Mar 8, 2010.

R. M. B. Agaiby, M. Becker, S. B. Thapa, U. Urmoneit, A. Berger et al.
Simultaneous and locally resolved determination of the mechanical stress variation and the free hole concentration using Raman spectroscopy is demonstrated in laser crystallized amorphous silicon layers. Such layers are often used for the fabrication of thin film solar cells, e.g., on borosilicate g ... [J. Appl. Phys. 107, 054312 (2010)] published Mon Mar 8, 2010.

R. Alvarez, A. Palmero, L. O. Prieto-Lopez, F. Yubero, J. Cotrino et al.
Morphological evolution of ZrO thin films deposited during pulsed laser deposition of Zr in O atmosphere has been experimentally studied at two different film deposition temperatures, 300 and 873 K. The roughness exponent, alpha, the growth exponent, beta, the coarsening exponent, 1/z, and the expon ... [J. Appl. Phys. 107, 054311 (2010)] published Mon Mar 8, 2010.

L. E. Khoong, Y. C. Lam, H. Y. Zheng, and X. Chen
A laser soft marking technique is developed for laser markings on a silicon wafer. Due to negligible surface modification, the laser soft wafer markings are invisible by naked eyes under room condition and are undetectable using sophisticated instruments. However, these laser markings are found to b ... [J. Appl. Phys. 107, 053107 (2010)] published Fri Mar 5, 2010.

Yuki Inaba, Gregory B. Thompson, J. W. Harrell, Tim Klemmer, and Yukiko Kubota
A series of [approximate]12 nm thick FePt thin films deposited onto glass substrates have been annealed with multiple 1064 nm wavelength laser pulses. The fluence was varied using pulse widths of 10.0, 5.0, and 2.5 ms. The peak temperature for each individual pulse was kept near 700 degrees C. The ... [J. Appl. Phys. 107, 053507 (2010)] published Thu Mar 4, 2010.

Ganapathy Senthil Murugan, Yuwapat Panitchob, Elizabeth J. Tull, Philip N. Bartlett, Daniel W. Hewak et al.
Glass microsphere resonators have the potential to add significant functionality to planar lightwave circuits when coupled to waveguides where they can provide wavelength filtering, delay and low-power switching, and laser functions. Design of such photonic circuits requires precise coupling between ... [J. Appl. Phys. 107, 053105 (2010)] published Thu Mar 4, 2010.

V. Ryzhii, A. A. Dubinov, T. Otsuji, V. Mitin, and M. S. Shur
Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate electron-hole plasma generated by optical radiation in the MGL stru ... [J. Appl. Phys. 107, 054505 (2010)] published Wed Mar 3, 2010.

Jorn Bonse and Jorg Kruger
A new approach is presented to quantify the so-called heat affected zone (HAZ) during femtosecond laser pulse processing. Ablation of titanium nitride (TiN) thin films (~3 [mu]m thickness) by multiple femtosecond laser pulses (tau=130 fs, lambda=800 nm) in air environment was studied by means of ... [J. Appl. Phys. 107, 054902 (2010)] published Tue Mar 2, 2010.