X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang et al.
We report the voltage tunable photodetecting properties of a LaCaMnO film grown on miscut LaSrAlO (001) substrates under ultraviolet pulsed laser irradiation at ambient temperature. The photovoltage and photocurrent peak sensitivities can be tuned in the range of 0.2950.786 V/mJ and 0.1720.314 A/mJ, ... [Appl. Phys. Lett. 97, 044104 (2010)] published Thu Jul 29, 2010.
Jeongsu Lee, William Falls, Rafal Oszwaldowski, and Igor Zutic
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasistatic and small signal analyses, we elucidate how the spin modulation in semiconductor las ... [Appl. Phys. Lett. 97, 041116 (2010)] published Thu Jul 29, 2010.
D. Brodoceanu, G. D. Cole, N. Kiesel, M. Aspelmeyer, and D. Bauerle
High-quality freestanding micromirrors consisting of 40 dielectric layers on silicon have been fabricated by ultrashort-pulse laser ablation in combination with laser-assisted wet chemical etching. Backside material removal enables direct access to both faces of the dielectric coating. The amplitude ... [Appl. Phys. Lett. 97, 041104 (2010)] published Mon Jul 26, 2010.
Chong Qi Yu and Hui Wang
Recent study shows the resistance of a metal-oxide-semiconductor (MOS) structure can be controlled by a laser via a bipolar-resistance effect (BRE). Based on this BRE phenomenon, we find an overlapped offset effect which is induced by an external bias applying to the structure. This offset effect fe ... [Appl. Phys. Lett. 97, 041105 (2010)] published Mon Jul 26, 2010.
Hiroyuki Sakurai, Seiji Yamazoe, and Takahiro Wada
We fabricated 001, 110, and 111 oriented AgNbO (AN) films on (001)SrTiO (STO), (110)STO, and (111)STO substrates by pulsed laser deposition, respectively. Scanning electron microscope images showed that the surface textures of the AN films on the (001), (110), and (111)STO substrates took the form o ... [Appl. Phys. Lett. 97, 042901 (2010)] published Mon Jul 26, 2010.
Shunsuke Murai, Koji Fujita, Junko Konishi, Kazuyuki Hirao, and Katsuhisa Tanaka
We have prepared random lasers that consist of macroporous titania monoliths infiltrated with dye solution and that operate close to light localization regime. When the excitation pulse energy exceeds a threshold, discrete spectral lines ascribed to laser oscillation appear on a featureless emission ... [Appl. Phys. Lett. 97, 031118 (2010)] published Fri Jul 23, 2010.
Yang Tan, Feng Chen, J. R. Vazquez de Aldana, G. A. Torchia, A. Benayas et al.
We report on continuous wave 1064 nm laser generation from an ultrafast laser inscribed neodymium-doped yttrium orthovanadate channel waveguide with pumping at 808 nm. Single-mode stable laser operations have been observed with pump powers at threshold as low as 14 mW and with laser slope efficienci ... [Appl. Phys. Lett. 97, 031119 (2010)] published Fri Jul 23, 2010.
V. G. Karpov
A physical mechanism of transformations between the amorphous and crystalline phases induced by the electric field of a laser beam is proposed. It creates needle-shaped crystal particles aligned to the beam polarization. The polarization driven orientation of particles can significantly increase the ... [Appl. Phys. Lett. 97, 033505 (2010)] published Wed Jul 21, 2010.
Fan Xiao, Ting-Hsiang Wu, and Pei Yu Chiou
We report on a rapid near field photothermal printing (NPTP) approach for fabricating gold microstructures and nanostructures guided by flexible and transparent polymer molds. The optical energy of nanosecond laser pulse is spatially redistributed by a PDMS phase-shifting mask, resulting in selectiv ... [Appl. Phys. Lett. 97, 031112 (2010)] published Wed Jul 21, 2010.
Kyu Sang Kim, Jin Ha Kim, Young Min Park, Su Jin Jung, Yong Jo Park et al.
To understand a major effect on efficiency droop, radiative characteristics of InGaN laser diodes (LDs) of emission wavelength of ~445 nm are studied at subthreshold levels for different active structures; (1) InGaN single quantum well (SQW), (2) double quantum wells (DQWs) with Si-doped barrier, a ... [Appl. Phys. Lett. 97, 031113 (2010)] published Wed Jul 21, 2010.